specifications and information are subject to change without notice wj communications, i nc phone 1 - 800 - wj1 - 4401 fax: 408 - 577 - 6621 e - mail: sales@wj.com web site: www.wj.com july 2004 the communications edge tm AH215 1 watt, high linearity hbt amplifier product information product features 400 ? 2300 mhz +31.5 dbm p1db +46 dbm output ip3 18 db gain @ 900 mhz single positive supply (+5 v) soic - 8 smt package applications final stage amplifiers for repeaters mobile infrastructure defense / homeland security product descrip tion the AH215 is a high dynamic range driver amplifier in a low - cost surface mount package. the ingap/gaas hbt is able to achieve superior performance for various narrowband - tuned application circuits with up to +46 dbm oip3 and +31.5 dbm of compressed 1 - db power. the part is housed in an industry standard soic - 8 smt package. all devices are 100% rf and dc tested. the product is targeted for use as driver amplifier for various current and next generation wireless technologies such as gprs, gsm, cdma, w - cdma, and umts, where high linearity and high power is required. the internal active bias allows the AH215 to maintain high linearity over temperature and operate directly off a +5 v supply. functional diagram function pin no. vref 1 input 3 output 6, 7 vbias 8 gnd backside paddle n/c or gnd 2, 4, 5 specifications (1) parameters units min typ max test frequency mhz 2140 gain db 10 11 input return loss db 18 output return loss db 8 output p1db dbm +29 +31.5 out put ip3 (2) dbm +43.8 +45 noise figure db 6.3 is - 95 channel power @ - 45 dbc acpr, 1960mhz dbm +26 w - cdma channel power @ - 45 dbc acpr, 2140 mhz dbm +23 operating current range , icc (3) ma 400 450 500 device voltage, vcc v 5 1. test condi tions unless otherwise noted: t = 25oc, vsupply = +5 v, frequency = 2140 mhz in a tuned application circuit. 2. 3oip measured with two tones at an output power of +15 dbm/tone separated by 1 mhz. the suppression on the largest im3 product is used to cal culate the 3oip using a 2:1 rule. 3. this corresponds to the quiescent current or operating current under small - signal conditions into pins 6, 7, and 8. it is expected that the current can increase by an additional 90 ma at p1db. pin 1 is used as a ref erence voltage for the internal biasing circuitry. it is expected that pin 1 will pull 10.8 ma of current when used with a series bias resistor of r1=51 w . (ie. total device current typically will be 461 ma.) typical performance (4) parameters units t ypical frequency mhz 900 1960 2140 s21 ? gain db 18 12 11 s11 db - 13 - 11 - 18 s22 db - 7 - 10 - 8 output p1db dbm +31 +32 +31.5 output ip3 dbm +46 +46 +45 is - 95a channel power @ - 45 dbc acpr dbm +25.5 +25.5 w - cdma channel power @ - 45 dbc ac pr dbm +23 noise figure db 7.0 5.5 6.2 supply bias +5 v @ 450 ma 4. typical parameters reflect performance in a tuned application circuit at +25 c. absolute maximum rating ordering information parameters rating part no. description operati ng case temperature - 40 to +85 c AH215 - s8 1 watt, high linearity ingap hbt amplifier storage temperature - 65 to +150 c AH215 - s8pcb900 900 mhz evaluation board rf input power (continuous) +26 dbm AH215 - s8pcb1960 1960 mhz evaluation board device volt age +8 v AH215 - s8pcb2140 2140 mhz evaluation board device current 900 ma device power 5 w operation of this device above any of these parameters may cause permanent damage. 1 2 3 4 8 7 6 5 .com .com .com .com 4 .com u datasheet
specifications and information are subject to change without notice wj communications, inc phone 1 - 800 - wj1 - 4401 fax: 408 - 577 - 6621 e - mail: sales@wj.com web site: www.wj.com july 2004 AH215 1 watt, high linearity hbt amplifier product information the communications edge tm typical device data s - parameters (v cc = +5 v, i cc = 450 ma, t = 25 c, calibrated to device leads) 0 0.5 1 1.5 2 2.5 frequency (ghz) gain and maximum stable gain -10 -5 0 5 10 15 20 25 30 35 40 gain (db) db(|s[2,1]|) db(gmax) 0 1.0 1.0 -1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 s11 swp max 5.05ghz swp min 0.05ghz 0 1.0 1.0 -1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 s22 swp max 5.05ghz swp min 0.05ghz notes: the gain for the unmatched device in 50 ohm system is shown as the trace in black color. for a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the ma ximum stable gain. the maximum stable gain is shown in the dashed red line. the impedance loss plots are shown from 0.05 ? 5.05 ghz, with markers placed in 0.5 ghz increments. s - parameters (v cc = +5 v, i cc = 450 ma, t = 25 c, unmatched 50 ohm system , calibrated to device leads) freq (mhz) s11 (db) s11 (ang) s21 (db) s21 (ang) s12 (db) s12 (ang) s22 (db) s22 (ang) 50 - 1.23 - 177.95 24.07 122.55 - 40.25 17.32 - 1.26 - 130.4 100 - 1.01 178.17 19.55 116.55 - 39.49 10.63 - 1.33 - 155.43 200 - 1.01 172.63 15.55 112.97 - 40.13 15.98 - 1.17 - 169.92 400 - 1.03 163.72 12.03 98.68 - 38.83 10.31 - 0.93 179.61 600 - 1.21 155.20 9.86 85.80 - 39.30 - 4.249 - 0.66 173.43 800 - 1.34 146.17 8.11 73.18 - 37.70 - 2.398 - 0.83 168.67 1000 - 1.52 136.69 6.92 61.43 - 37.73 - 16.27 - 0.95 166. 34 1200 - 2.00 126.65 6.13 49.60 - 37.14 - 14.34 - 1.05 165.13 1400 - 2.65 115.04 5.80 37.55 - 36.23 - 28.50 - 1.04 164.55 1600 - 3.86 97.52 6.01 21.48 - 36.45 - 46.08 - 1.11 166.24 1800 - 6.72 86.05 6.17 1.700 - 34.63 - 68.99 - 1.10 164.44 2000 - 14.09 94.99 6.15 - 23 .83 - 35.91 - 100.68 - 1.00 162.35 2200 - 9.98 166.89 4.98 - 52.92 - 36.75 - 147.66 - 0.77 158.42 2400 - 4.27 157.68 2.52 - 80.08 - 39.10 171.86 - 0.79 154.12 2600 - 2.13 142.95 - 0.42 - 100.8 - 37.80 123.26 - 0.81 149.03 2800 - 1.24 130.88 - 3.40 - 116.44 - 38.58 89.55 - 0 .84 144.09 3000 - 0.82 120.68 - 6.09 - 128.99 - 39.37 67.22 - 0.92 138.4 application circuit pc board layout circuit board material: top rf layer is .014? getek, 4 total layers (0.062? thick) for mechanical rigidity 1 oz copper, microstrip line details: width = .026?, spacing = .026? the silk screen markers ?a?, ?b?, ?c?, etc. and ?1?, ?2?, ?3?, etc. are used as placemarkers for the input and output tuning shunt capacitors ? c8 and c9. the markers and vias are spaced in .050? increments. .com .com .com .com .com 4 .com u datasheet
specifications and information are subject to change without notice wj communications, inc phone 1 - 800 - wj1 - 4401 fax: 408 - 577 - 6621 e - mail: sales@wj.com web site: www.wj.com july 2004 AH215 1 watt, high linearity hbt amplifier product information the communications edge tm 90 0 mhz application circuit (AH215 - s8pcb900) typical rf performance at 25 c frequency 900 mhz s21 ? gain 18 db s11 ? input return loss - 13 db s22 ? output return loss - 7.0 db output p1db +31 dbm output ip3 (+17 dbm / tone, 1 mhz spacing) +46 dbm channel power (@ - 45 dbc acpr, is - 95 9 channels fwd) +25.5 dbm noise figure 7.0 db device / supply voltage +5 v quiescent current (1) 450 ma 1. this corresponds to the quiescent current or operating current under small - signal conditions into pin s 6, 7, and 8. s21 vs. frequency (mhz) 8 10 12 14 16 18 20 840 860 880 900 920 940 frequency (mhz) s21 (db) +25c +85c -40c s11 vs. frequency -20 -16 -12 -8 -4 0 840 860 880 900 920 940 frequency (mhz) s11 (db) +25c +85c -40c s22 vs. frequency -20 -16 -12 -8 -4 0 840 860 880 900 920 940 frequency (mhz) s22 (db) +25c +85c -40c noise figure vs. frequency 5 6 7 8 9 10 840 860 880 900 920 940 frequency (mhz) nf (db) +25c +85c -40c p1 db vs. frequency 24 26 28 30 32 34 840 860 880 900 920 940 frequency (mhz) p1 db (dbm) +25c +85c -40c acpr vs. channel power is-95, 9 ch. fwd, 885 khz offset, 30 khz meas bw, 900 mhz -70 -65 -60 -55 -50 -45 -40 19 20 21 22 23 24 25 26 27 output channel power (dbm) acpr (dbc) +25c +85c -40c oip3 vs. output power freq. = 900, 901 mhz, +25c 35 38 41 44 47 50 10 13 16 19 22 25 output power (dbm) oip3 (dbm) oip3 vs. temperature freq. = 900, 901 mhz, +15 dbm 35 38 41 44 47 50 -40 -15 10 35 60 85 temperature (c ) oip3 (dbm) oip3 vs. frequency +25c, +15 dbm / tone 35 38 41 44 47 50 840 860 880 900 920 940 frequency (mhz) oip3 (dbm) .com .com .com .com .com 4 .com u datasheet
specifications and information are subject to change without notice wj communications, inc phone 1 - 800 - wj1 - 4401 fax: 408 - 577 - 6621 e - mail: sales@wj.com web site: www.wj. com july 2004 AH215 1 watt, high gain hbt amplifier product information the communications edge tm 1960 mhz application circuit (AH215 - s8pcb1960) typical rf performance at 25 c frequency 1960 mhz s21 ? gain 12 db s11 ? input return loss - 11 db s22 ? output return loss - 10 db output p1db +32 dbm output ip3 (+17 dbm / tone, 1 mhz spacing) +46 dbm channel power (@ - 45 dbc acpr, is - 95 9 channels fwd) +25.5 dbm noise figure 5.5 db device / supply vo ltage +5 v quiescent current (1) 450 ma 1. this corresponds to the quiescent current or operating current under small - signal conditions into pins 6, 7, and 8. s21 vs. frequency 8 10 12 14 16 18 1930 1940 1950 1960 1970 1980 1990 frequency (mhz) s21 (db) +25c +85c -40c s11 vs. frequency -25 -20 -15 -10 -5 0 1930 1940 1950 1960 1970 1980 1990 frequency (mhz) s11 (db) +25c +85c -40c s22 vs. frequency -25 -20 -15 -10 -5 0 1930 1940 1950 1960 1970 1980 1990 frequency (mhz) s22 (db) +25 c +85 c -40c noise figure vs. frequency 0 1 2 3 4 5 6 7 8 1930 1940 1950 1960 1970 1980 1990 frequency (mhz) nf (db) +25c +85c -40c p1 db vs. frequency 25 27 29 31 33 35 1930 1940 1950 1960 1970 1980 1990 frequency (mhz) p1 db (dbm) +25c +85c -40c acpr vs. channel power is-95, 9 ch. fwd. 885 khz offset, 30 khz meas bw, 1960 mhz -85 -80 -75 -70 -65 -60 -55 -50 -45 -40 15 16 17 18 19 20 21 22 23 24 25 26 27 output channel power (dbm) acpr (dbc) +25c +85c -40c oip3 vs. frequency +25c, 15 dbm / tone 35 40 45 50 55 1930 1940 1950 1960 1970 1980 1990 frequency (mhz) oip3 (dbm) oip3 vs. temperature freq. = 1960, 1961 mhz, +15 dbm 35 39 43 47 51 55 -40 -15 10 35 60 85 temperature ( c) oip3 (dbm) oip3 vs. output power freq. = 1960, 1961 mhz, +25c 30 34 38 42 46 50 10 12 14 16 18 20 22 output power (dbm) oip3 (dbm) .com .com .com .com .com 4 .com u datasheet
specifications and information are subject to change without notice wj communications, inc phone 1 - 800 - wj1 - 4401 fax: 408 - 577 - 6621 e - mail: sales@wj.com web site: www.wj. com july 2004 AH215 1 watt, high gain hbt amplifier product information the communications edge tm 2140 mhz application circuit (AH215 - s8pcb214 0) typical rf performance at 25 c frequency 2140 mhz s21 ? gain 11 db s11 ? input return loss - 18 db s22 ? output return loss - 8.0 db output p1db +31.5 dbm output ip3 (+15 dbm / tone, 1 mhz spacing) +45 dbm channel power (@ - 45 dbc acpr, is - 95 9 c hannels fwd) +23 dbm noise figure 6.2 db device / supply voltage +5 v quiescent current (1) 450 ma 1. this corresponds to the quiescent current or operating current under small - signal conditions into pins 6, 7, and 8. s21 vs. frequency 0 3 6 9 12 15 2110 2120 2130 2140 2150 2160 2170 frequency (mhz) s21 (db) +25c +85c -40c s11 vs. frequency -30 -26 -22 -18 -14 -10 2110 2120 2130 2140 2150 2160 2170 frequency (mhz) s11 (db) +25c +85c -40c s22 vs. frequency -20 -15 -10 -5 0 2110 2120 2130 2140 2150 2160 2170 frequency (mhz) s22 (db) +25c +85c -40c noise figure vs. frequency 0 1 2 3 4 5 6 7 8 9 2110 2120 2130 2140 2150 2160 2170 frequency (mhz) nf (db) +25c +85c -40c p1 db vs. frequency 24 26 28 30 32 34 2110 2120 2130 2140 2150 2160 2170 frequency (mhz) p1 db (dbm) +25c +85c -40c acpr vs. channel power 3gpp w-cdma, test model 1+64 dpch, 5mhz offset, 2140 mhz -65 -60 -55 -50 -45 -40 19 20 21 22 23 24 output channel power (dbm) acpr (dbc) +25c +85c -40c oip3 vs. temperature freq. = 2140, 2141 mhz, +15 dbm / tone 35 38 41 44 47 50 -40 -15 10 35 60 85 temperature (c ) oip3 (dbm) oip3 vs. frequency +25c, +15 dbm / tone 35 38 41 44 47 50 2110 2120 2130 2140 2150 2160 2170 frequency (mhz) oip3 (dbm) oip3 vs. output power freq. = 2140, 2141 mhz, 25c 35 38 41 44 47 50 10 12 14 16 18 20 22 output power (dbm) oip3 (dbm) .com .com .com .com .com 4 .com u datasheet
specifications and information are subject to change without notice wj communications, inc phone 1 - 800 - wj1 - 4401 fax: 408 - 577 - 6621 e - mail: sales@wj.com web site: www.wj. com july 2004 AH215 1 watt, high gain hbt amplifier product information the communications edge tm outline drawing land pattern thermal specifications parameter rating operating case temperature - 40 to +85 c thermal resistance, rth (1) 33 c / w junction temperature, tj c (2) 159 c notes: 1. the thermal resistance is referenced from the hottest part of the junction to the ground slug underneath the device . 2. this corresponds to the typical biasing condition of +5v, 450 ma at an 85 c case temperature. a minimum mtt f of 1 million hours is achieved for junction temperatures below 247 c. tjc is a function of the voltage at pins 6 & 7 and the current applied to pins 6, 7, and 8 and can be calculated by: tjc = tcase + rth * vcc * icc product marking the component will be marked with an ?AH215 - s8? designator with an alphanumeric lot code on the top surface of the package. tape and reel specifications for this part are located on the website in the ?application notes? section. esd / msl information esd rating: class 1b value: passes between 500 and 1000v test: human body model (hbm) standard: jedec standard jesd22 - a114 msl rating: level 3 at +235 c convection reflow standard: jedec standard j - std - 020 mounting config. notes 1. a h eatsink underneath the area of the pcb for the mounted device is strictly required for proper thermal operation. damage to the device can occur without the use of one. 2. ground / thermal vias are critical for the proper performance of this device. vias should use a .35mm (#80 / .0135?) diameter drill and have a final plated thru diameter of .25 mm (.010?). 3. add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 4. mounting screws can be added n ear the part to fasten the board to a heatsink. ensure that the ground / thermal via region contacts the heatsink. 5. do not put solder mask on the backside of the pc board in the region where the board contacts the heatsink. 6. rf trace width depends upon the pc board material and construction. 7. use 1 oz. copper minimum. 8 all dimensions are in millimeters (inches). angles are in degrees. mttf vs. gnd tab temperature 100 1000 10000 100000 1000000 50 60 70 80 90 100 tab temperature ( c) mttf (million hrs) .com .com .com .com 4 .com u datasheet
|
